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May 2020 – IXYS Discrete IGBTs

Published on: 29/05/2020

Introducing the extensive range of IXYS discrete IGBTs

IXYS Discrete IGBTs by GD Rectifiers

IXYS offer a large selection of Discrete IGBTs featuring low energy losses and exceptional device ruggedness whilst maintaining low on-state voltages.

 

BiMOSFETs

IXYS’ BiMOSFETs combine the strength of a MOSFET and an IGBT. They have positive temperature coefficient of Vce (sat) and VF feature low conduction losses, making them an ideal solution for high frequency, high power density applications.

IXYS BiMOSFETs by GD Rectifiers

High Voltage

1600V-1700V Reverse Conducting (BiMOSFET) IGBTs

Vces (V): 1600V-1700V

Ic @ 25°C (A): 5.7A-200A

Vce(sat) (V): 2.50V-7.00V

Datasheet

 

Very High Voltage

2500V-3600V Reverse Conducting (BiMOSFET) IGBTs

Vces (V): 2500V-3600V

Ic @ 25°C (A): 5A-156A

Vce(sat) (V): 2.70V-3.80V

Datasheet

 

IXYS Discrete IGBTs

NPT IGBTs

NPT IGBTs feature RBSOA and 10us short circuit withstand capability. They feature a positive temperature coefficient of Vce(sat), ideal for paralleling. They are typically used in motor drive applications.

IXYS NPT IGBTs by GD Rectifiers

High Voltage

1600V-1700 NPT (Non-Punch Through) IGBTs

Vces (V): 1600V-1700V

Ic @ 25°C (A): 5.5A-280A

Vce(sat) (V): 2.5V-7.0V

Datasheet

 

Standard

600V-1200V NPT (Non-Punch Through) IGBTs

Vces (V): 600V-1200V

Ic @ 25°C (A): 32A-150A

Vce(sat) (V): 2.7V-3.0V

Datasheet

 

Very High Voltage

2500V-4000V NPT (Non-Punch Through) IGBTs

Vces (V): 2500V-4000V

Ic @ 25°C (A): 5.5A-170A

Vce(sat) (V): 2.70V-4.00V

Datasheet

 

PT (Punch-Through) IGBTs

Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimised for higher switching speed applications up to 100kHz in UPS, off-line switching power supplies and induction cooking.

IXYS PT IGBTs by GD Rectifiers

High Frequency

300V-1400V PT (Punch Through) IGBTs

Vces (V): 300V-1400V

Ic @ 25°C: 40A-500A

Vce(sat) (V): 1.8V-5.0V

Datasheet

 

Low Frequency

300V-1200V PT (Punch Through) IGBTs

Vces (V): 300V-1200V

Ic @ 25°C (A): 16A-400A

Vces(sat) (V): 1.15V-4.0V

Datasheet

 

Mid Frequency

300V-1400V PT (Punch Through) IGBTs

Vces (V): 300V-1400V

Ic @ 25°C (A): 14A-430A

Vce(sat) (V): 1.5V-3.60V

Datasheet

 

SMPD Packages

IXYS’ Surface Mount Power Device (SMPD) package is an innovative solution that allows design optimisation opportunities across a large number of power electronics applications.

IXYS SMPD Package by GD Rectifiers

BiMOSFETs

3000V Surface mount Power Device (SMPD) Packages

Vces (V): 3000

Ic @ 25*C (A): 26A-38A

Vce(sat) (V): 2.70V-3.20V

Datasheet

 

Standard

600V-2500V Surface Mount Power Device (SMPD) Packages

Vces (V): 600V-

Ic @25°C (A): 23A-450A

Vce(sat) (V): 1.50V-18.00V

Datasheet

 

XPT IGBTs

IXYS’ Xtreme-light Punch Through (XPT) IGBTs feature 10 us short circuit withstand capability. They have a positive temperature coefficient of Vce(sat), ideal for paralleling. They are a preferred solution in motor drive applications.

IXYS XPT IGBTs by GD Rectifiers

 

High Voltage

1700V-4500V XPT (eXtreme-light Punch Through) IGBTs

Vces (V): 1700V-4500V

Ic @ 25°C (A): 23A-178A

Vce(sat) (V): 3.30V-4.50V

Datasheet

 

Planar

600V-1200XPT (eXtreme-light Punch Through) IGBTs

Vces (V): 600V-1200V

Ic @ 25°C (A): 9A-600A

Vce(sat) (V): 1.60V-3.50V

Datasheet

 

Trench

650V-1200V XPT (eXtreme-light Punch Through) IGBTs

Vces (V): 650V-1200V

Ic @ 25°C (A): 38A-480A

Vce(sat) (V): 1.70V-15.00V

Datasheet

 

High Power IGBTs

IXYS offers a wide range of Pressure Contact IGBTs, featuring ratings from 1.7kv to 6.5kv and current ratings from 115A to 3ka.

IXYS High Power IGBTs by GD Rectifiers

Capsule Type

Press-Pack IGBT

Vces (V): 1700-6500V

Ic @ 25°C (A): 115A-3000A

Icm (A): 230A-6000A

Datasheet

 

Gate Unit Drives

Press Pack IGBT Gate Drive Units

Use with Devices: T0115QC45G, T0140QC33G, T0240NB45E, T0285NC33E, T0340VB45G, T0425VC33G, T051VB45E, T0600NC17A, T0600TB45A, T0640VC33E, view all

Package Type: Gate Drive Unit

Datasheet

 

GD Rectifiers has been an official distributor for IXYS for over 20 years. The UK IXYS distributor stocks the complete range of IXYS’ power semiconductors including: diodes, IGBTs, MOSFETs, Rectifier Bridges, AC Controlled Thyristors, SiC Power MOSFETs, SiC Schottky Diodes, Switchable Current Regulators, Thyristors and Thyristor Module Accessories.

 

For further information on IXYS’ extensive range of semiconductors please call GD Rectifiers today on: 01444 243 452 or email: enquiries@gdrectifiers.co.uk.

 

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