IXYS’ Ultra Junction x4 Class Power MOSFETs offer lower RDS(on) simultaneously with reduced gate and output charges, allowing for more efficient switching at any given frequency.

IXYS Ultra Junction x4 Class Power MOSFET

 Features

• Low gate charge
• Low RDS(on)
• Low RthJC
• 175°C operating temperature
• High avalanche rating 900mJ

Benefits

• Low gate drive power demand
• Low losses
• High power dissipation capability
• High ruggedness against overvoltage

Markets/Applications

• Switched-mode and resonant-mode power supplies with low input voltage for telecom and server applications
• Battery circuits in forklifts and golf carts
• DC-DC converters with low input voltage
• Motor control (48-110V systems)
• Small Uninterrupted Power Supply for residential applications

IXYS’ Ultra Junction x4 Class Power MOSFETs Datasheets

IXTH94N20X4M

IXTH220N20X4

IXTT220N20X4HV

GD Rectifiers is an official distributor for IXYS and distributes their complete range of semiconductors including: diodes, IGBTs, inverter modules, MOSFETs, rectifier bridges, AC controlled thyristors, SiC power MOSFETs, Sic Schottky diodes, switchable current regulators, thyristors, thyristor diode modules and thyristor module accessories.

For further information on IXYS products or to discuss your enquiry, please contact GD Rectifiers on: 01444 243 452.