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June 2021 – IXYS Discrete MOSFETs

Published on: 21/06/2021

Introducing the popular IXYS Discrete MOSFETs

IXYS Discrete MOSFETs by GD Rectifiers

IXYS is a pioneering manufacturer of power semiconductors, they offer a broad range of power MOSFETs including linear and depletion mode power MOSFETs that continue to set the industry standard for high voltage, high power discrete MOSFETs applications.

Automotive Qualified

These IXYS MOSFET devices have been extensively tested and approved for the rigorous automotive applications.

IXYS Automotive Qualified MOSFETs by GD Rectifiers

Ultra Junction X-Class

800V Automotive Qualified Ultra Junction X-Class Power MOSFETs

  • Vdss (V): 800
  • Rds(ON)max @ 25°C (Ohm): 0.105-0.145
  • Id cont @ 25°C (A):40-50

Datasheets

 

Ultra Junction X2-Class

600V-650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs

  • Vdss (V): 600V-650
  • Rds(ON)max @ 25°C (Ohm): 0.038-0.310
  • Id cont @ 25°C (A): 12-80

Datasheets

 

Ultra Junction X4-Class

150V Automotive Qualified Ultra Junction X4-Class Power MOSFETs

  • Vdss (V): 150
  • Rds(ON)max @ 25°C (Ohm): 0.0072-0.0085
  • Id cont @ 25°C (A):100-150

Datasheets

 

N-Channel Depletion Mode

Depletion mode MOSFETs require a negative gate bias to turn off. They are suitable for level shifting, solid state relays, current regulators and active loads.

IXYS N-Channel Depletion Mode MOSFETs by GD Rectifiers

D2

100V-1700V N-Channel Depletion Mode Power MOSFETs

  • Vdss (V): 100-1700
  • Rds(on)max @ 25°C (Ohm): 0.064-21.000
  • Id cont @ 25°C (A): 0.8-16

Datasheets

 

Standard

500V-1700V N-Channel Depletion Mode Power MOSFETs

  • Vdss (V): 500-1700
  • Rds(ON)max @ 25°C (Ohm): 1.40-80.00
  • Id cont @25°C (A): 0.1-10

Datasheet

 

N-Channel HiPerFETs

IXYS HiPerFETs are a popular Power MOSFET for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.

IXYS N-Channel HiPerFETs by GD Rectifiers

Polar

100V-1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)

  • Vdss (V): 100-1200
  • Rds(on)max @ 25°C (Ohm): 0.0055-3.3
  • Id cont @ 25°C (A): 0.7-300

Datasheets

 

Polar2

500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)

  • Vdss (V): 500
  • Rds(on)max @ 25°C (Ohm): 0.043-0.270
  • Id cont @ 25°C (A): 24-120

Datasheets

 

Polar3

300V-600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)

  • Vdss (V): 300-600
  • Rds(on)max @ 25°C (Ohm): 0.0145-2.4
  • Id cont @ 25°C (A): 4-210

Datasheets

 

Q-Class

100V-1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes

  • Vdss (V): 100-1000
  • Rds(on)max @ 25°C (Ohm): 0.015-3.000
  • Id cont @ 25°C (A): 2.2-90

Datasheets

 

Q2-Class

500V-1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes(9HiPerFETs)

  • Vdss (V): 500-1000
  • Rds(on)max @ 25°C (Ohm): 0.060 – 1.100
  • Id cont @ 25°C (A): 9.5-80.0

Datasheets

 

Q3-Class

200V-1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)

  • Vdss (V): 200-1100
  • Rds(on)max @ 25°C (Ohm): 0.040-
  • Id cont @ 25°C (A): 10-100

Datasheets

 

Standard

60V-1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)

  • Vdss (V):  60-1200
  • Rds(on)max @ 25°C (Ohm): 0.003-4.5
  • Id cont @ 25°C (A): 3-340

Datasheets

 

N-Channel Linear

IXYS N-Channel Linear MOSFETs are ideal for applications that require square SOA characteristics, while operating with simultaneous presence of Vds and Id, such as current regulators and electronic loads.

IXYS N-Channel Linear Power MOSFET by GD Rectifiers

L2

75V-600V N-Channel Linear Power MOSFETs with Extended FBSOAs

  • Vdss (V):75-600
  • Rds(on)max @ 25°C (Ohm):0.007-0.480
  • Id cont @ 25C (A):15-240

Datasheets

 

Standard

200V-2500V N-Channel Linear Power MOSFETs with Extended FBSOAs

  • Vdss (V): 200-2500
  • Rds(on)max @ 25°C (Ohm): 0.0083-15.000
  • Id cont @ 25C (A): 2-80

Datasheets

 

N-Channel Standard

IXYS offers a wide range of standard N-Channel Power MOSFETs designed for superior performance for both, hard switching and resonant mode applications.

IXYS N-Channel Standard MOSFET by GD Rectifiers

High Voltage

100V-1500V N-Channel Standard Power MOSFETs

  • Vdss (V): 100-1500
  • Rds(on)max @ 25°C (Ohm): 0.020-80.00
  • Id cont @ 25C (A): 0.10-24

Datasheets

 

Polar

100V-1200V N-Channel Standard Power MOSFETs

  • Vdss (V): 100-1200
  • Rds(on)max @ 25°C (Ohm):  0.0075-80.00
  • Id cont @ 25C (A): 0.1-200.0

Datasheets

 

Polar2

500V N0Channel Standard Power MOSFETs

  • Vdss (V): 500
  • Rds(on)max @ 25°C (Ohm):  0.120-0.330
  • Id cont @ 25C (A): 16-52

Datasheets

 

Polar3

2000V-3000V N-Channel Standard Power MOSFETs

  • Vdss (V): 2000-3000
  • Rds(on)max @ 25°C (Ohm): 4.00-190.00
  • Id cont @ 25C (A): 0.40-6.00

Datasheets

 

Very High Voltage

2500V-4700V N-Channel Standard Power MOSFETs

  • Vdss (V): 2500-4700
  • Rds(on)max @ 25°C (Ohm): 8.80-625.00
  • Id cont @ 25C (A): 0.20-5.00

Datasheets

 

N-Channel Super Junction

The Super Junction Power MOSFET range features the lowest Rds(on) in the 600-800 V class MOSFETs. These devices are avalanche rated and guarantee rugged operation. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heatsink.

 IXYS Super Junction MOSFETs by GD Rectifiers

C3 Class

600V-800V N-Channel Super Junction Power MOSFETs

  • Vdss (V): 600-800
  • Rds(on)max @ 25°C (Ohm): 0.036-0.190
  • Id cont @ 25°C (A): 15-85

Datasheets

 

C5 Class

600V N-Channel Super Junction Power MOSFETs

  • Vdss (V): 600
  • Rds(on)max @ 25°C (Ohm): 0.045-0.200
  • Id cont @ 25°C (A): 15-70

Datasheets

 

CFD Class

650V N-Channel Super Junction Power MOSFETs

  • Vdss (V): 650
  • Rds(on)max @ 25°C (Ohm): 0.08
  • Id cont @ 25°C (A): 25

Datasheets

 

Multi-Chip Configurations

600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other

  • Vdss (V): 600
  • Rds(on)max @ 25°C (Ohm): 0.045-0.165
  • Id cont @ 25°C (A): 15-47

Datasheets

 

N-Channel Trench Gate

IXYS Trench Gate Power MOSFETs require an exceedingly low Rds(on), guaranteeing very low power dissipation. This feature, combined with operating junction temperatures from

-40°C-175°C, making them suitable for low voltage/high current operations such as automotive applications.

IXYS N-Channel Trench Gate MOSFETs by GD Rectifiers

Gen1

55V-300V Trench Gate Power MOSFETs with HiPerFET Options

  • Vdss (V): 55-300
  • Rds(on) max @ 25°C (V):0.0023-0.0660
  • Id cont @ 25°C (A): 12-420

Datasheets

 

Gen2

40V-175V Trench Gate Power MOSFETs with HiPerFET Options

  • Vdss (V): 40-175
  • Rds(on) max @ 25°C (V): 0.0010-0.0170
  • Id cont @ 25°C (A): 70-600

Datasheets

 

Gen3

60V Trench Gate Power MOSFETs with HiPerFET Options

  • Vdss (V): 60
  • Rds(on) max @ 25°C (V): 0.0031-0.004
  • Id cont @ 25°C (A): 220-270

Datasheets

 

Gen 4

36V-40V Trench Gate Power MOSFETs with HiPerFET Options

  • Vdss (V): 36-40
  • Rds(on) max @ 25°C (V):0.00085-0.0029
  • Id cont @ 25°C (A):230-660

Datasheets

 

N-Channel Ultra Junction

IXYS Ultra Junction MOSFETs feature low Rs(on) and low Qg in industry standard packages. They enable high power density, easy mounting and space saving opportunities making them ideal solutions in SMPS, DCDC converters, Pfc circuits and AC/DC motor drives.

IXYS Ultra Junction MOSFETs by GD Rectifiers

X Class

600V-1000V Ultra Junction Power MOSFETs with HiPerFET Options

  • Vdss(V): 600-1000
  • Rds(on)max @ 25°C (Ohm): 0.033-2.500
  • Id cont @ 25°C (A): 3.5-110.0

Datasheets

 

X2 Class

650V-700V Power MOSFETs with HiPerFET Options

  • Vdss(V): 650-700
  • Rds(on)max @ 25°C (Ohm):  0.013-2.30
  • Id cont @ 25°C (A): 2.00-120

Datasheets

 

X3 Class

150V-300V N-Channel Ultra Junction Power MOSFETs with HiPerFET Options

  • Vdss(V): 150-300
  • Rds(on)max @ 25°C (Ohm): 0.0025-0.0135
  • Id cont @ 25°C (A): 26-400

Datasheets

 

X4 Class

135V-150V N-Channel Ultra Junction Power MOSFETs with HiPerFET Options

  • Vdss(V): 135-150
  • Rds(on)max @ 25°C (Ohm): 0.0031-0.0115
  • Id cont @ 25°C (A): 100-400

Datasheets

 

P-Channel

IXYS P-Channel Power MOSFETs are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to form a complementary pair for a number of applications.

IXYS P-Channel MOSFETs by GD Rectifiers

Polar

100V to -600V P-Channel Power MOSFETs

  • Vdss(V): -600 to -100
  • Rds(on)max @ 25°C (Ohm): 0.0140-1.0000
  • Id cont @ 25°C (A): -170 to -10

Datasheets

 

Standard

100V to -600V P-Channel Power MOSFETs

  • Vdss(V): -600 to -100
  • Rds(on)max @ 25°C (Ohm): 0.055 – 1.200
  • Id cont @ 25°C (A): -50 to -8

Datasheets

 

Trench Gate

50V to -200V P-Channel Power MOSFETs

  • Vdss(V): -200 to -50
  • Rds(on)max @ 25°C (Ohm): 0.0075 – 0.3500
  • Id cont @ 25°C (A):  -210 to -10

Datasheets

 

SMPD Packages

IXYS’ Surface Mount Power Device (SMPD) package creates a solution that allows design optimisation opportunities across a large number of power electronics applications.

IXYS SMPD MOSFETs by GD Rectifiers

HiPerFET and MOSFET

40V – 110V HiPerFETs and MOSFETs in Surface Mount Power Device (SMPS) Packages

  • Vdss (V): 40-1100
  • Rds(on) max @ 25°C (Ohm): 0.00085-41.00000
  • Id cont @ 25°C (A): 24-660

Datasheets

 

GD Rectifiers is proud to be one of IXYS’ largest Distributors in the UK, offering their complete range of: diodes, IGBTs, MOSFETs, rectifier bridges, AC controlled thyristors, SiC power MOSFETs, SiC schottky diodes, switchable current regulators, thyristors, thyristor module accessories and IGBT and MOSFET gate drivers.

 

GD Rectifiers has been distributing IXYS power semiconductors for over twenty years, offering buyers, engineers and procurements specialists the best prices, lead times and technical support on the complete IXYS product range.

 

For further information on IXYS products, or to discuss an enquiry, please contact GD Rectifiers today on: 01444 243 452 or email: enquiries@gdrectifiers.co.uk.

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