July 2021 – IXYS New LSIC1MO170T0750 1700V, 750mΩ SiC MOSFET
Published on: 12/07/2021
Introducing the new IXYS SiC MOSFETs in a TO-263-7L package
The new IXYS 1700V, 750mΩ silicon carbide (SiC) MOSFETs are presented in a TO-263-7L package. The separated source pin significantly reduces the parasitic source inductance path to the driver, which helps to reduce switching times and switching losses. The maximum operating junction temperature of this device is 175°C which helps to improve the systems reliability. These new MOSFETs are perfect for high-frequency applications where high efficiency is desired.
SiC MOSFET Benefits
- Optimised for high-frequency, high-efficiency applications
- Separated source pin reduces parasitic source inductance
SiC MOSFET Features
- Extremely low gate charge and output capacitance, low gate resistance
- Low on resistance
- Optimised package with separated driver source pin
SiC MOSFET Applications
- High-frequency applications
- Solar inverters
- Switched Mode Power Supplies
- Motor drives
- High Voltage DC-DC converters
- Battery chargers
- Induction heating
GD Rectifiers is an official distributor for IXYS and distributes their complete range of semiconductors including, diodes, IGBTs, inverter modules, MOSFETs, rectifier bridges, AC controlled thyristors, SiC power MOSFETs, Sic Schottky diodes, switchable current regulators, thyristors, thyristor diode modules and thyristor module accessories.
For further information on IXYS semiconductors, and to receive competitive pricing and technical support on your requirements, please contact our team on: 01444 243 452 or email: firstname.lastname@example.org.