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December 2016 – IXYS Trench-Gate Power MOSFETs

Published on: 06/12/2016

Introducing IXYS Trench-Gate Power MOSFETs 

IXYS Trench-Gate Power MOSFETs


IXYS Trench-Gate Power MOSFETs

The IXYS Trench Power MOSFETs features IXYS’ robust Trench cell design commonly used in their wide portfolio of power devices. They feature an ultra low resistance, minimising conduction losses and promoting improved operating and thermal efficiencies.

These Trench P-Channel MOSFETs are suitable for ‘high side’ switching where a simple drive circuit referenced to ground can be employed, circumventing additional ‘high-side’ driver circuitry commonly used when using an N-Channel MOSFET. This enables designers to reduce component count by improving the drive circuit simplicity and cost structure.  It also allows for the design of a complementary power output stage with a corresponding IXYS N-Channel MOSFET for a power half bridge stage with a simple drive circuit. Applications for these MOSFETs include: high-side switching, high current regulators, DC choppers, CMOS high power amplifiers. Push-pull amplifiers and power solid state relays.

GD Rectifiers are the official IXYS Distributor in the UK, with over 50 years of experience, they are an ISO 9001:2008 registered company that design and develop bespoke power semiconductor assemblies to control voltage, current and frequency for international industrial markets.

For further information on all IXYS products click here or alternatively contact us today with your enquiry on 01444 243 452 /


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