12.03.2024
March 2024 – Dynex’s 1.2kV and 1.7kV Gen5 Trench Gate M1 IGBT Modules
Ideal for applications within the electric vehicle, industrial, renewable, and traction markets
Dynex’s range of M1 Generation 5 IGBT Modules feature enhanced field stop and implantation technology, comprising of: DIM450M1HS12-PB500, DIM600M1HS12-PC500 and DIM450M1HS17-PA500.
The M1 modules are designed to scale 152mm x 62mm x 11mm and weigh 345g. The modules have a chip junction temperature operating range from -40°C to a maximum of 150°C and are suitable for applications within the electric vehicle, industrial, renewable and traction markets.
Benefits
Modules incorporate electrically isolated based plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
Key Features
- Trench Gate IGBT
- Cu base with enhanced AI2O3 substrates
- High thermal cycling capability
- 10µs short circuit withstand
- Low EON EOFF Variant
- Compact module
Applications
- Power charging equipment
- Renewable energy power conversion
- Electric vehicles
- Motor drives
Dynex’s Powerline range includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 3600A.
Download Dynex’s M1 Generation 5 IGBT Module datasheets below:
GD Rectifiers has access to Dynex’s high-power IGBT modules and fast recovery diodes.
For further information on Dynex’s product range or to discuss your requirements, please call GD Rectifiers on: 01444 243 452 or email: enquiries@gdrectifiers.co.uk.
