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July 2017 – IXYS 1500V MOS-Gated Thyristors

Published on: 17/07/2017

Learn more about the MOS-Gated Thyristors range from IXYS

IXYS 1500V MOS-Gated Thyristors

IXYS 1500V MOS-Gated Thyristors

The IXYS 1500V MOS-Gated Thyristors are designed for high-power pulse and capacitive discharge applications. They are switched on by a voltage applied at the gate terminal (MOS structure). The devices are capable of carrying a current up to 32kA for a period of 1 microsecond.

IXYS have anti-parallel diodes which are available, the range features high power densities and low gate drive requirements. They are available in the following proprietary packages:

  • Surface mountable SMPD and Mini-SMPD
  • High voltage versions of the international standard TO-247: TO-247HV and TO-247PLUS-HV


Proprietary SMPD and High-Voltage Packages

SMPD Advantages

  • Ultra-low and compact package profile
  • Surface mountable via standard reflow process
  • Low package weight (SMPD: 8g, Mini-SMPD: 5g)
  • Low package inductance
  • Excellent thermal performance
  • High power cycling capability


TO-247HV and TO-247PLUS-HV Advantages

  • Increased creepage distance between leads
  • PCB space savings
  • Easy to mount
  • Arc prevention in high voltage applications


Direct Copper Bond (DCB) Isolation

  • Provides 2500V ceramic isolation
  • Improves temperature and power cycling capabilities
  • Reduces EMI/RFI due to low coupling capacitance
  • Lowers thermal resistance
  • Allows new circuit configurations


GD Rectifiers are an official distributor for IXYS in the UK, they have direct access to their extensive product range including: IXYS UK Westcode, IXYS Colorado, IXYS RF and IXYS Power. 

For further information on the complete IXYS product range, please call: 01444 243 452 or email: 


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