July 2017 – IXYS 1500V MOS-Gated Thyristors

Published on: 17/07/2017

Learn more about the MOS-Gated Thyristors range from IXYS

IXYS 1500V MOS-Gated Thyristors

The IXYS 1500V MOS-Gated Thyristors are designed for high-power pulse and capacitive discharge applications. They are switched on by a voltage applied at the gate terminal (MOS structure). The devices are capable of carrying a current up to 32kA for a period of 1 microsecond.

IXYS have anti-parallel diodes which are available, the range features high power densities and low gate drive requirements. They are available in the following proprietary packages:

• Surface mountable SMPD and Mini-SMPD
• High voltage versions of the international standard TO-247: TO-247HV and TO-247PLUS-HV

Proprietary SMPD and High-Voltage Packages

SMPD Advantages

• Ultra-low and compact package profile
• Surface mountable via standard reflow process
• Low package weight (SMPD: 8g, Mini-SMPD: 5g)
• Low package inductance
• Excellent thermal performance
• High power cycling capability

TO-247HV and TO-247PLUS-HV Advantages

• Increased creepage distance between leads
• PCB space savings
• Easy to mount
• Arc prevention in high voltage applications

Direct Copper Bond (DCB) Isolation

• Provides 2500V ceramic isolation
• Improves temperature and power cycling capabilities
• Reduces EMI/RFI due to low coupling capacitance
• Lowers thermal resistance
• Allows new circuit configurations

GD Rectifiers are an official distributor for IXYS in the UK, they have direct access to their extensive product range including: IXYS UK Westcode, IXYS Colorado, IXYS RF and IXYS Power. 

For further information on the complete IXYS product range, please call: 01444 243 452 or email: enquiries@gdrectifiers.co.uk.