18.07.2023
IXYS 200V X4 Ultra Junction MOSFETs
Introducing the new 200V X4 Ultra Junction MOSFETs
The new IXYS 200V X4 Ultra Junction MOSFETs are designed using the latest Ultra Junction technology for high efficiency power applications. They are available in TO-263 and TO-220 packages and enable more efficient switching at a given frequency due to the combination of lower RDS(on) and reduced gate/output charges.
IXYS 200V X4 Ultra Junction MOSFETs: The Benefits
- Low losses
- Low gate drive requirements
- High power dissipation capability
- High ruggedness against overvoltage
Features
- Low RDS(on) and low RthJC
- Low gate charge
- Operating temperature up to 175°C
- High avalanche rating (500mJ)
Applications
- Switched-mode and resonant-mode power supplies
- AC and DC motor drives
- Low-speed EV
- DC-DC converters
- Uninterruptible Power Supplies (UPS)
Datasheets
GD Rectifiers is an authorised distributor for IXYS and stocks their extensive range of power semiconductors, including: diodes, IGBTs, thyristors, MOSFETs, IGBT and MOSFET gate drivers, inverter modules, AC controlled thyristors, Sic power MOSFETs, SiC Schottky diodes, switchable current regulators, thyristor diode modules and thyristor module accessories.
For further information on the new IXYS 200V X4 Ultra junction MOSFETs please call GD Rectifiers on: 01444 243 452 or email: [email protected].
