MOSFETs

A MOSFET (metal-oxide semiconductor field-effect transistor) is a specialised field-effect transistor, used for switching and amplifying signals. Discrete MOSFETs are particularly useful in amplifiers due to their input impedance which allows the amplifier to capture almost all of the incoming signal.

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State-of-the-art Discrete Power MOSFETs by IXYS

Our broad range of Power MOSFETs include HiPerFET, linear, depletion mode, N-Channel and RF Power MOSFETs. We also offer switchable current regulators to help simplify circuits.

IXYS manufactures a wide range of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) which are used for high frequency switching control of power electronic systems.

The IXYS MOSFET range includes: Trench Power MOSFET, TrenchT2™ Power MOSFET, Polar MOSFET, IXYS’ Polar™ HiPerFET, Legacy (Standard) MOSFET, Legacy HiPerFET™, Q-Class Power MOSFET, Q-Class HiPerFET™, Q2-Class HiPerFET™, Linear Power MOSFET, Depletion-Mode MOSFET, Legacy (Standard) P-Channel MOSFET, PolarP™ P-Channel MOSFET, TrenchP™ P-Channel MOSFET, and CoolMOS™ * Power MOSFET.

 

IXYS MOSFETs by GD Rectifiers

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MOSFETs Finder

Discover the MOSFETs best suited to your application by using our finder tool. Browse our MOSFET range quickly by using the finder tool to compare the most relevant parts for your design.

View MOSFET Finder

MOSFETs

A MOSFET (metal-oxide semiconductor field-effect transistor) is a specialised field-effect transistor, used for switching and amplifying signals

MOSFETs are a popular type of transistor and there are two primary types of transistors; a Bipolar Junction Transistor (BJT) and a Field Effect Transistor (FET). BJTs are normally used for electrical currents under 1A whereas FETs or MOSFETs, are used for higher current applications. MOSFETs are available in depletion or enhancement modes, depletion MOSFETs allow current to floe when the on voltage is applied and if the negative voltage is applied, the current will stop. Whereas enhancement mode MOSFETs are varied and are a favourite for modern-day engineers and applications.

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IXYS MOSFETs

IXYS manufacture an extensive range of MOSFETs which are used for high frequency switching control of power electronic systems. IXYS offers various MOSFET technology covering a large range of voltage and switching frequencies.

Extended FBSOA Linear Power MOSFETs

IXYS’ Extended FBSOA Linear Power MOSFETs are specifically designed for applications that require Power MOSFETs to operate in their current saturation region. These devices feature low static drain to source on-resistances and provide unparalleled performance and reliability in controlled current output applications.

Depletion-Mode MOSFETs

Depletion-Mode Power MOSFETs do not require energy or gate voltage for turn on, they operate in a “normally-on” mode. The “normally-on” operational mode of these devices combined with an enhanced linear operating capability allows for an ideal device selection in current sources, current regulators, solid-state relays, level shifting, active loads, start-up circuits and active power filters.

PolarP™ P-Channel Power MOSFETs

IXYS’ Polar technology features a proprietary cell design that improves overall device efficiency and performance. This technology platform reduces on-state resistance by as much as 30% and the gate charge by 40% compared to legacy counterparts. These devices offer low conduction and switching losses with a low input capacitance.

TrenchP™ P-Channel Power MOSFETs

IXYS’ Trench cell design features an ultra low Rds(on) minimising conduction losses and boosting improved operating and thermal efficiencies. The TrenchP™ P-Channel MOSFETs are suitable for high-side switching where a simple drive circuit referenced to ground can be employed, circumventing additional high-side driver circuitry commonly involved when using an N-Channel MOSFET.

Very High Voltage Power MOSFETs

The VHV N-Channel power MOSFETs are specifically designed to cater for demanding, fast-switching applications that require blocking capabilities of 2.5kV to 4.5kV. These Power MOSFETs are also ideal for parallel operation due to the positive temperature coefficient of their on-state resistance. Parallel operation with these devices provides a more cost-effective solution than using series-connected, lower-voltage MOSFETs.

ISOPLUS i4-PAC

IXYS’ ISOPLUS i4-PAC IGBT modules are available in 600V, 1200V and 1700V in a range of 18A-65A. IXYS offer 3,4 and 5 leaded packages for various circuit topologies. DCB base plate features: 2500V electrical isolation, low thermal resistance, increased power and temperature cycling, saves space, replaces multiple discretes, reduces parasitic inductance and capacitance and reduces EMI.

Please click on the IXYS MOSFET types below to view the complete range.

Trench MOSFETs / HiPerFETs (Fast Body Diode)

TrenchT2™ MOSFETs / HiPerFETs (FBD)

Polar™ MOSFETs / HiPerFETs (FBD)

PolarP2™ MOSFETs / HiPerFETs (FBD)

PolarP3™ HiPerFETs (FBD)

X-Class Power MOSFETs

SiC MOSFETs 

Q3-Class HiPerFET™ (Fast Body Diode)

Very High Voltage ( up to 4500V) / Legacy MOSFETs

Linear2™ Power MOSFETs

Depletion-Mode MOSFETs

PolarP™ MOSFETs

TrenchP™ P-Channel MOSFETs

CoolMOS™

MOSFET Modules   

ISOPLUS i4-PAC 

 

For further information on IXYS MOSFETs please contact us on 01444 243 452 or email enquiries@gdrectifiers.co.uk.

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