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March 2015 – IXYS releases new 2000V Power MOSFETs

Published on: 27/03/2015

IXYS announces new 2000V Power MOSFETs

IXYS Corporation (NASDAQ: IXYS), a manufacturer of power semiconductors and integrated circuits for energy efficiency, power management, and motor control applications, announces an expansion of its high-voltage Power MOSFET product portfolio: 2000V N-Channel Power MOSFETs. With a current rating of 1A, they are specifically designed for high-voltage, high-speed power conversion applications.

 

IXTH1N200P3, new 2000V power MOSFETs

New 2000V Power MOSFETs

Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower-voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving.

These new Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid.

The 2000V Power MOSFETs are available in the following international standard size packages: TO-247, TO-247HV, and TO-263HV. The latter two have increased creepage distances between leads, making them possible to withstand higher voltages.

The new parts are:

IXTH1N200P3
IXTH1N200P3HV
IXTA1N200P3HV

For all pricing and email enquiries, please click here or call the office on 01444 243452.

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