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June 2013 – New IXYS Press-pack IGBT’s + high power sonic-FRD

Published on: 14/06/2013

New IXYS Press-pack IGBT’s

With a track record spanning more than 10 years as a leading innovator in press-pack IGBT technology, IXYS UK now owned by Littelfuse is proud to offer their range of 2.5kV and 4.5kV devices featuring the latest generation chipset offering improved SOA.

This advanced technology is based on an enhanced planar cell design featuring the latest carrier enhancement techniques. Delivering comparable VCE(sat) to modern trench designs whilst retaining the superior RBSOA, SCSOA performance and easy driving characteristics of traditional planar technology. When combined with IXYS UK’s proven hermetic press-pack technology, these devices re-define the state-of-the-art for high power switching devices

Features and benefits

•    Bondless construction for improved reliability.
•    Hermetic devices suitable for all cooling options including direct liquid immersion.
•    Explosion and rupture safe.
•    High thermal cycling resistance.
•    Double side cooling.
•    Mechanically compatible with GTO thyristors, allowing upgrading of existing equipment and designs to new IGBT technology.

 

New IXYS Press-pack IGBT's

 

IGBT’s

VCES IC ICM VCE(sat) IGBT Switching VF Diode Recovery TJM RthJK Fig. No.
IC=IC Typical IF=IC Typical IGBT Diode
EON EOFF Irm trr Qr
Part No. V A A V J J V A µs µC °C K/W K/W
T0360NB25A 2500 360 720 2.95 0.85 0.60 2.25 240.0 0.9 320.0 125 0.0541 0.0730 W40
T0500NB25E 2500 500 1000 2.90 1.20 0.84 N/A N/A N/A N/A 125 0.0386 N/A W40
T0570VB25G 2500 570 1140 2.95 1.40 0.95 2.05 320 1.6 450 125 0.0338 0.0365 W67
T0850VB25E 2500 850 1700 2.90 2.00 1.40 N/A N/A N/A N/A 125 0.0225 N/A W67
T1200TB25A 2500 1200 2400 3.00 2.80 2.00 2.50 660 1.1 950 125 0.0169 0.0292 W41
T1500TB25E 2500 1500 3000 2.90 3.70 2.60 N/A N/A N/A N/A 125 0.0129 N/A W41
T2250AB25E 2500 2250 4500 2.90 5.30 3.70 N/A N/A N/A N/A 125 0.0085 N/A W71
T0160NB45A 4500 160 320 3.40 1.10 0.70 3.75 120.0 2.7 300.0 125 0.0720 0.1720 W40
T0240NB45E 4500 240 480 3.80 1.50 1.10 N/A N/A N/A N/A 125 0.0525 N/A W40
T0340VB45G 4500 340 680 3.50 2.90 1.40 3.45 220 3.2 500 125 0.0364 0.0576 W67
T0510VB45E 4500 510 1020 3.60 4.20 2.10 N/A N/A N/A N/A 125 0.0243 N/A W67
T0600TB45A 4500 600 1200 3.70 4.60 2.90 3.90 640.0 1.2 700.0 125 0.0218 0.0432 W41
T0800TB45E 4500 800 1600 3.50 7.00 4.30 N/A N/A N/A N/A 125 0.0156 N/A W41
T0800EB45G 4500 800 1600 3.60 6.30 3.70 3.50 800 1.5 1020 125 0.0156 0.0247 W44
T0900EB45A 4500 900 1800 3.80 3.80 3.60 3.90 610 2.3 920 125 0.0140 0.0260 W44
T1200EB45E 4500 1200 2400 3.60 5.70 5.10 N/A N/A N/A N/A 125 0.0080 N/A W44
T1600GB45G 4500 1600 3200 3.50 14.00 8.70 3.45 1380 1.7 1970 125 0.0078 0.0123 W45
T1800GB45A 4500 1800 3600 3.60 12.60 9.50 3.90 1600 1.6 1850 125 0.0073 0.0144 W45
T2400GB45E 4500 2400 4800 3.60 15.00 14.00 N/A N/A N/A N/A 125 0.0052 N/A W45

 

Drivers

Part No. IGBT Type
C0044BG400SBK T0160NB45A
C0044BG400SBL T0240NB45E
C0044BG400SBQ T0340VB45G
C0044BG400SBA T0360NB25A
C0044BG400SBB T0500NB25E
C0044BG400SBE T0510VB45E
C0044BG400SBF T0570VB25G
C0044BG400SBM T0600TB45A
C0044BG400SBG T0800EB45G
C0044BG400SBN T0800TB45E
C0044BG400SBH T0850VB25E
C0044BG400SBP T0900EB45A
C0044BG400SBR T1200EB45E
C0044BG400SBC T1200TB25A
C0044BG400SBD T1500TB25E
C0044BG400SBJ T1600GB45G
C0044BG400SBS T1800GB45A
C0044BG400SBV T2250AB25E
C0044BG400SBT T2400GB45E

 

Third generation high power sonic-FRD

Improved safe operating area (SOA) and reverse recovery characteristics for both 2.5kV and 4.5kV HP-sonic monolithic diode range complements our new asymmetric IGBT range and also supports such applications as multi-level diode clamped converters.

These diodes incorporate a unique manufacturing process and lifetime control to offer a class leading trade-off between conduction and switching losses. The wide SOA makes them ideal as freewheeling diodes for snubberless IGBT and IGCT applications.

Features

•    Robust dynamic characteristics – di/dt> 4000A/µs
•    150°C operating junction temperature
•    Soft fast recovery – no snap off
•    Low recovery losses, low forward voltage drop
•    Snubberless operation

Applications

•    Anti-parallel diodes of IGBT’s and IGCT’s
•    Clamp and snubber diodes
•    Any application which requires a fast low loss diode

Ideally suited for:

  • Traction
  • Medium voltage drives
  • Renewables
  • Induction heating
  • Pulsed power applications

 

Type VRRM Dimensions
A B
Part No. V mm mm
E0170YH40-45C 4000 – 4500 25 42
E0280YH20-25C 2000 – 2500 25 42
E0460QC40-45C 4000 – 4500 38 60
E0660NC40-45C 4000 – 4500 47 74
E0800QC20-25C 2000 – 2500 38 60
E1200NC20-25C 2000 – 2500 47 74
E1300VF40-45C 4000 – 4500 63 100
E2250VF20-25C 2000 – 2500 63 100
E2400TC40-45C 4000 – 4500 75 112
E4000TC20-25C 2000 – 2500 75 112

 

For a full pdf, please click here.

For all email enquiries, please click here or call the office on 01444 243452.

 

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