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Introducing GD Rectifiers’ extensive range of silicon carbide power modules

Introducing the new IXYS SiC MOSFETs in a TO-263-7L package

Introducing IXYS’ low side SiC MOSFET and IGBT driver

SiC Power MOSFETs can switch fast while maintaining high blocking voltages but their superior switching qualities can have potential drawbacks

Semiconductors have become the fundamental building blocks for designs looking to address power conversion challenges

Discover the advantages and disadvantages of using silicon carbide today

IXYS silicon carbide package options available at GD Rectifiers

As more engineers choose to use silicon carbide, we look at the benefits SiC has to offer