12.02.2026
Littelfuse SiC MOSFETs 1200V, 65A TO-247-4L, TO-263-7L (D2PAK) packages
Discover the features and benefits of the 1200V Littelfuse SiC MOSFETs
Today efficient semiconductor components help to manage power dissipation by reducing efforts in thermal management and increased power density.
Littelfuse’s 1200V SiC MOSFETs help solve these problems by providing low on-state resistance of 40mΩ and are rated 65A in TO-247-4L and TO-263-7L (D2PAK) packages. Engineered to feature low on-state resistance to minimise power losses while maintaining excellent switching performance, making them suitable for high frequency and high efficiency power management applications such as solar inverters, DC/DC converters and industrial power supplies.
Littelfuse SiC MOSFETs 1200V
Features
- Low on-state resistance of RDS(on)= 40mΩ
- SiC MOSFETs technology with -3/+15… +18V gate drive
- Ultra-fast intrinsic body diode with trr of 42ns and 47ns
- Kelvin source connection
- Low thermal resistance junction-case of 0.36K/W and 0.4K/W
Benefits
- Low conduction losses
- Comprehensive choice of gate drivers available
- Suitable for hard-switching for inductive load
- Improved switching performance allows compact designs with smaller heat sinks
Applications
- Renewable energy: solar inverters, battery energy storage systems
- EV charging infrastructure: boost converter, DC/DC converter stage
- Industrial manufacturing: industrial power supplies, inductive heating, DC/DC converters, UPS
Datasheets
At GD Rectifiers, we stock a large range of Silicon Carbide (SiC) MOSFETs and modules, including new popular parts from leading manufacturers.
For further information on Littelfuse SiC MOSFETs, please contact GD Rectifiers on 01444 243 452 or email enquiries@gdrectifiers.co.uk.
