IXYS Diodes

A comprehensive range of Diodes which include: Gallium Arsendie Schottky Diodes, Silicon Carbide Schottky Diodes, Schottky Diodes, HiPerDyn™ FRED Diodes, Ultra Fast Diodes (Dual), HiPerFRED™ Diodes, Sonic-FRD™ Diodes, FRED Diodes, and Rectifier Diodes.

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IXYS Diodes

Discrete Semiconductor Diodes

IXYS manufacture a broad range of diodes for high switching frequencies, available in surface mount and PCB mounted packages. IXYS manufacture a comprehensive range of Diodes which include: Gallium Arsendie Schottky Diodes, Silicon Carbide Schottky Diodes, Schottky Diodes, HiPerDyn™ FRED Diodes, Ultra Fast Diodes (Dual), HiPerFRED™ Diodes, Sonic-FRD™ Diodes, FRED Diodes, and Rectifier Diodes. These are available in a range of circuits including discrete, dual diodes, half bridge, full bridge (single and three phase), double diode common anode and cathode, and double diode anode and cathode.

IXYS’ Schottky Diodes are available in 8V to 200V with a current rating of 6A to 200A and are available in two packages: Silicon Schotty Diodes and Silicon Schottky Gen² Diodes (2nd generation). They feature low VF, low IRM-values and low noise switching. Other benefits of using the Schotty Diodes include: extremely low switching losses, high reliability circuit operation and low voltage peaks for reduced protection circuits.

IXYS’ manufacture a wide range of Rectifier Diodes available in DS-series (anode or stud) and DSI-series (cathode or stud) which are mainly used for rectifying 50 or 60 Hz mains currents. Discrete diodes in plastic and metal housings and different diode bridges are also available for standard line voltages from 110V to 690V AC.

IXYS Fast Recovery Capsule Diodes

Fast Recovery Epitaxial Diodes (HiPerFRED, FRED) and FRD (Sonic)

HiPerDYN™ FRED Ultra Fast Diodes
° VRRM from 300, 600 and 1200V
° IFAV range: 6A to 55A
° Very low capacitance, less than 5pf
° Soft recovery
° Very low trr and IRM
° Available in single and phase-leg

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IXYS Sonic Fast Recovery Diodes

SONIC-FRD™ Fast Recovery Diodes

° Blocking voltages: 600V, 1200V and 1800V
° Ifav: 10A to 60A
° Vf independent of junction temperature
° Extremely low leakage current
° Soft recovery event at high temperature
° Stable blocking voltage

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IXYS Fast Recovery Diodes (FREDs)

Fast Recovery Diodes (FREDs)

° Blocking voltages: 200V to 1200V
° Ifav: 6A – 165A
° trr: less than 40ns
° Single, dual or common cathode configurations available
° Variety of packages, including isolate types available

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IXYS’ range of Ultra Fast Recovery Diodes are designed to offer the lowest practical values of reverse recovery current whilst offering wide safe operating area and high di/dt capability required by modern switching components such as IGBTs, GCTs and pulsed power applications.

IXYS Semifast Diode

SemiFast Diodes

° Voltage rating from 1400V to 1800V
° International standard package JEDEC TO-247 AD
° Planar passivated chips
° Very short recovery time
° Extremely low switching losses
° Low IRM-values
° Soft recovery behaviour

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IXYS Schottky Diodes

Schottky Diodes

° Features Vrrm: 8V to 200V
° Ifav: 6A to 200A
° Very low VF, Low IRM-values, Low noise switching
° Extremely low switching losses
° High reliability circuit operation
° Low voltage peaks for reduced protection circuits

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IXYS Avalanche Diodes

Rectifier & Avalanche Diodes

° Vrrm: 800 to 1600V
° If (avg): 2.3A to 110A
° DS: Standard, DSA: Avalanche rated
° Planar glassivated chips
° Ideal for 50/60Hz rectification
° Single, Phase-Leg, common Cathode or Dual Diodes

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Rectifier Bridges & PFC

1- Rectifier Bridges
° Blocking voltages: 800V to 1800V
° Id (avg): 18A to 174A
° Package with screw terminals, space and weight savings
° Isolation voltage: 3000V, UL recognised
° Planar passivated chips, utilise DCB technology
° Low forward voltage drop
° Improved temperature and power cycling

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IXYS Half and Controlled Bridges

Half & Full Controlled Bridges

° Vrrm: 800V to 1600V
° Id (avg): 15A to 167A
° Isolation voltage 3000V, UL recognised
° Planar passivated chips
° Improved temperature and power cycling
° Economical method to generate controlled D.C. power from 1- or 3- mains

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3- Rectifier Bridges

° Vrrm: 800V to 1800V
° Id (avg): 15A to 248A
° Screw terminals, space and weight savings
° Isolation voltage 3000V, UL recognised
° Planar passivated chips
° Low Vf. improved temperature and power cycling

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IXYS Three Phase Bridges

3- Bridges with IGBT and Diode for Brake Unit

° Vrrm: 600V to 2200V
° Id (avg): 22A to 188A
° Soldering connections for PCB mounting
° Isolation voltage 3600V, UL recognised
° Fast IGBT & Ultrafast diode. Optional NTC Thermistor on some units

View Bridges with IGBT and Diode for Brake Units

Diode Bridges

° Monolithic Construction
° Surface Mount Package
° Used in: telecommunications protection clamp, high voltage multiplexer switch

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IXYS Breakover Diodes

Breakover Diodes

Breakover Diodes
° Transient voltage protection
° High voltage switches
° Crowbar
° Lasers
° Pulse generators

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IXYS Fast Breakover Diodes

Fast Breakover Diodes

° Temperature coefficient Kt, reduced by a factor of 3
° Significant reduction of the switching-on time down to a few nanoseconds
° Applications include: high intensity discharge lighting (HID) and high DC current power transmissions for long distances

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IXYS Power Semiconductors

IXYS is a world leading manufacturer of power semiconductors

IXYS’ power MOS product lines include power metal-oxide semiconductor field effect transistors (MOSFETs), insulated gate bipolar transistors (IGBTs) and BIMOSFETs.  IXYS’ power MOSFETs are used in large power conversion systems and applications from 60 to 4,000 volts. Its IGBTs are used in alternating current motor drives, power systems and defibrillators. Bipolar products include rectifiers, thyristors and GTOs.

GD Rectifiers has been the UK’s official distributor for IXYS Corporation, IXYS Colorado and IXYS UK Westcode for over 20 years. Founded as a silicon valley power semiconductor company, IXYS pioneered the high voltage power MOSFET and IGBT technologies and today is one of the few semiconductor companies that offer the full product portfolio for power management.

IXYS comprises of three divisions: IXYS Corporation, IXYS IC (Clare) and IXYS Colorado. IXYS Corporation is one of the world’s leading power semiconductor manufacturers, they offer a comprehensive range of MOSFETs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, RF Systems, Rectifiers, Power Interface ICs, IGBTs and Thyristors, in discrete and integrated power modules.

The IXYS IC division designs and produces SOI base HVIC’s flexible display drivers, driver IC’s, optically isolated drivers, solid state relays (SSR), isolated AC switches, ocptocouplers, photovoltaic chips and ASIC’s.

IXYS Colorado manufacturers Radio Frequency (RF) and Microwave Discrete Semiconductor products, including: RF Amplifiers, RF MOSFETs, Hybrid Modules, RF Drivers and Gunn Diodes.

IXYS Corporation is a renowned global supplier of power management semiconductors, their products provide improved efficiency and reduced energy costs in a wide range of power system applications. IXYS Semiconductors, Integrated Circuits and RF Systems are used across numerous applications in the transportation, medical, industrial, telecommunications and computing industries. IXYS’ semiconductors generate clean energy, control motors, improve automation, improve medical equipment and electrifies transportation.

GD Rectifiers is IXYS’ Official UK Distributor, stocking the complete range of IXYS Semiconductor Components. GD Rectifiers is the largest online stockist for IXYS IGBTs, Diodes, Thyristors and MOSFETs, with hundreds of IXYS products in stock now. GD Rectifiers provides design and technical support on IXYS components, offering products at the best prices with unrivalled fast delivery, making GD Rectifiers the UK’s number one IXYS distributor.

View the complete IXYS product range here.

For further information on the IXYS range, please call: 01444 243 452 or email enquiries@gdrectifiers.co.uk.