Silicon Carbide (SiC) Devices
Browse our extensive range of Silicon Carbide (SiC) devices by IXYS and Semikron, including: SiC power MOSFETs, SiC Schottky diodes, Hybrid SiC power modules and SiC Power modules, suitable for a wide range of applications.
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Silicon Carbide Devices
Popular SiC devices by IXYS and Semikron
Silicon Carbide (SiC) devices are a popular choice for engineers due to their low ON resistance and superior high-temperature, high-frequency, and high-voltage performance when compared to silicon.
SiC is a compound semiconductor composed of silicon and carbide and it provides numerous advantages over silicon, including: 10x the breakdown electric field strength, 3x the band gap, and enabling a wider range of p- and n-type control required for device construction.
The result is a breakthrough performance, which isn’t possible with silicon, making it the most viable successor for next-generation power devices.
At GD Rectifiers, we offer a wide range of SiC devices by IXYS and Semikron. SiC makes it possible to achieve high withstand voltage using majority carrier devices (Schottky barrier diode, MOSFET) through high-speed device construction, enabling simultaneous high withstand voltage, low ON resistance, and high-speed operation.
