October 2020 - IXYS IX4351NE SiC MOSFET and IGBT Driver
Published on: 28/10/2020
Introducing IXYS' low side SiC MOSFET and IGBT driver
IXYS’ IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimising switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.
Desaturation detection circuitry detects an over current condition of the SiC MOSFET and initiates a soft turn-off, preventing a potentially damaging dV/dt event. The logic input is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage. Protection features include UVLO and thermal shutdown detection. An open drain fault output signals a fault condition to the microcontroller.
The IX4351NE is rated for operational temperature range of -40°C to +125°C and is available in a thermally enhanced 16-pin power SOIC package.
GD Rectifiers distributes IXYS’ diodes, IGBTs, MOSFETs, rectifier bridges, AC controlled thyristors, SiC power MOSFETs, SiC schottky diodes, switchable current regulators, thyristors and thyristor module accessories.