29.05.2020
May 2020 – IXYS Discrete IGBTs
Published on: 29/05/2020
Introducing the extensive range of IXYS discrete IGBTs
IXYS offer a large selection of Discrete IGBTs featuring low energy losses and exceptional device ruggedness whilst maintaining low on-state voltages.
BiMOSFETs
IXYS’ BiMOSFETs combine the strength of a MOSFET and an IGBT. They have positive temperature coefficient of Vce (sat) and VF feature low conduction losses, making them an ideal solution for high frequency, high power density applications.
High Voltage
1600V-1700V Reverse Conducting (BiMOSFET) IGBTs
Vces (V): 1600V-1700V
Ic @ 25°C (A): 5.7A-200A
Vce(sat) (V): 2.50V-7.00V
Very High Voltage
2500V-3600V Reverse Conducting (BiMOSFET) IGBTs
Vces (V): 2500V-3600V
Ic @ 25°C (A): 5A-156A
Vce(sat) (V): 2.70V-3.80V
IXYS Discrete IGBTs
NPT IGBTs
NPT IGBTs feature RBSOA and 10us short circuit withstand capability. They feature a positive temperature coefficient of Vce(sat), ideal for paralleling. They are typically used in motor drive applications.
High Voltage
1600V-1700 NPT (Non-Punch Through) IGBTs
Vces (V): 1600V-1700V
Ic @ 25°C (A): 5.5A-280A
Vce(sat) (V): 2.5V-7.0V
Standard
600V-1200V NPT (Non-Punch Through) IGBTs
Vces (V): 600V-1200V
Ic @ 25°C (A): 32A-150A
Vce(sat) (V): 2.7V-3.0V
Very High Voltage
2500V-4000V NPT (Non-Punch Through) IGBTs
Vces (V): 2500V-4000V
Ic @ 25°C (A): 5.5A-170A
Vce(sat) (V): 2.70V-4.00V
PT (Punch-Through) IGBTs
Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimised for higher switching speed applications up to 100kHz in UPS, off-line switching power supplies and induction cooking.
High Frequency
300V-1400V PT (Punch Through) IGBTs
Vces (V): 300V-1400V
Ic @ 25°C: 40A-500A
Vce(sat) (V): 1.8V-5.0V
Low Frequency
300V-1200V PT (Punch Through) IGBTs
Vces (V): 300V-1200V
Ic @ 25°C (A): 16A-400A
Vces(sat) (V): 1.15V-4.0V
Mid Frequency
300V-1400V PT (Punch Through) IGBTs
Vces (V): 300V-1400V
Ic @ 25°C (A): 14A-430A
Vce(sat) (V): 1.5V-3.60V
SMPD Packages
IXYS’ Surface Mount Power Device (SMPD) package is an innovative solution that allows design optimisation opportunities across a large number of power electronics applications.
BiMOSFETs
3000V Surface mount Power Device (SMPD) Packages
Vces (V): 3000
Ic @ 25*C (A): 26A-38A
Vce(sat) (V): 2.70V-3.20V
Standard
600V-2500V Surface Mount Power Device (SMPD) Packages
Vces (V): 600V-
Ic @25°C (A): 23A-450A
Vce(sat) (V): 1.50V-18.00V
XPT IGBTs
IXYS’ Xtreme-light Punch Through (XPT) IGBTs feature 10 us short circuit withstand capability. They have a positive temperature coefficient of Vce(sat), ideal for paralleling. They are a preferred solution in motor drive applications.
High Voltage
1700V-4500V XPT (eXtreme-light Punch Through) IGBTs
Vces (V): 1700V-4500V
Ic @ 25°C (A): 23A-178A
Vce(sat) (V): 3.30V-4.50V
Planar
600V-1200XPT (eXtreme-light Punch Through) IGBTs
Vces (V): 600V-1200V
Ic @ 25°C (A): 9A-600A
Vce(sat) (V): 1.60V-3.50V
Trench
650V-1200V XPT (eXtreme-light Punch Through) IGBTs
Vces (V): 650V-1200V
Ic @ 25°C (A): 38A-480A
Vce(sat) (V): 1.70V-15.00V
High Power IGBTs
IXYS offers a wide range of Pressure Contact IGBTs, featuring ratings from 1.7kv to 6.5kv and current ratings from 115A to 3ka.
Capsule Type
Press-Pack IGBT
Vces (V): 1700-6500V
Ic @ 25°C (A): 115A-3000A
Icm (A): 230A-6000A
Gate Unit Drives
Press Pack IGBT Gate Drive Units
Use with Devices: T0115QC45G, T0140QC33G, T0240NB45E, T0285NC33E, T0340VB45G, T0425VC33G, T051VB45E, T0600NC17A, T0600TB45A, T0640VC33E, view all
Package Type: Gate Drive Unit
GD Rectifiers has been an official distributor for IXYS for over 20 years. The UK IXYS distributor stocks the complete range of IXYS’ power semiconductors including: diodes, IGBTs, MOSFETs, Rectifier Bridges, AC Controlled Thyristors, SiC Power MOSFETs, SiC Schottky Diodes, Switchable Current Regulators, Thyristors and Thyristor Module Accessories.
For further information on IXYS’ extensive range of semiconductors please call GD Rectifiers today on: 01444 243 452 or email: enquiries@gdrectifiers.co.uk.
