X

Power Assemblies and Controllers

Circuit Protection

May 2020 - Dynex’s Extremely Robust 6500V IGBTs

Published on: 19/05/2020

Discover the benefits of using Dynex's 6500V IGBTs

Dynex 6500V IGBTs by GD Rectifiers

Single switch, soft punch through n-channel enhancement mode, insulated gate bipolar transistor (IGBT) modules. The new 6500V IGBT range has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand.

 

World Class FRD RBSOA Performance

The integrated FWD reverse bias safe operating is (RBSOA) and defined as the voltage and current conditions over which the device can be expected to operate safely.

 

The safe operating area SOA of an IGBT modules is the area bounded by a curve of collector current VS collector-emitter voltage. The curve gives the limits of current and voltage related to the total power dissipation of the device. If the operating conditions of the device are within this area, then the device will function safely provided it is not exceeded. The reverse bias bias safe operating are (RBSOA) curve is the locus of points defining the maximum permissible simultaneous occurrence of collector current and collector-emitter voltage during the turn-off phase. The curve exhibits three limiting boundaries; maximum collector current (the flat portion of the curve), the maximum power (sloping line) and maximum voltage (vertical line). The user should observe that the RBSOA curve is constructed for a given set of conditions and so it is useful for comparison between different devices.

 

Dynex 6500V IGBTs Data by GD Rectifiers

The maximum limit of the FWD reverse recovery current is set by the recommended gate resistor specified in the datasheet. The maximum limit of reverse recovery voltage is set by the diode reverse blocking voltage rating. The user should verify that during the commutation of diode current to the IGBT, the reverse recovery current and the voltage should stay within the RBSOA of the diode for the complete process. The maximum junction temperature of the FWD should not exceed 125°C and the maximum switching controlled by the gate conditions of the IGBT should not be allowed to be exceeded.

 

Excellent power handling with soft recovery under arduous conditions

RBSOA specifications are useful to the design engineer working on power circuits such as amplifiers and power supplies as they allow quick assessment of the limits of device performance, the design of appropriate protection circuitry, or selection of a more capable device. RBSOA curves are also important in the design of foldback circuits.

 

Vertically integrated IGBT module manufacturing

The Dynex manufacturing plant is a vertically integrated facility with a device design, wafer fabrication, module packaging, qualification and testing all taking place at their headquarters in Lincoln, UK.

 

Dynex has over 60 years of high power semiconductor manufacturing taking place in the Dynex facilities in Lincoln, they are able to deliver vertically integrated semiconductor modules through their experience and expertise to deliver highly robust IGBT modules tailored to customers’ needs.

 

This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated based plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heatsinks for safety.

 

GD Rectifiers is an authorised distributor for Dynex Semiconductors, and distributes their range of fast recovery diode (FRD) modules and high power IGBT modules.

 

For further information on Dynex’s products, or to discuss your requirements, please call us on: 01444 243 452 or email: .(JavaScript must be enabled to view this email address).