IXYS’ X4-Class 135V-200V N-Channel Ultra Junction Power MOSFETs with HiPerFET options are developed using a charge compensation principle and proprietary process technology, resulting in significantly reduced resistance RDS(on) and gate charge Qg.

A low-on state resistance reduces the conduction losses and lowers the energy stored in the output capacitance, minimising the switching losses.

A low gate charge results in lower gate drive requirements and higher efficiency at light loads. IXYS’ Ultra Junction MOSFETs are avalanche rated and feature a superior dv/dt performance, they can also be operated in parallel to meet higher current requirements due to their positive temperature coefficient of their on-state resistance.

IXYS Ultra Junction MOSFETs

Features:

• Low on-resistance RDS(on) and gate charge Qg
• dv/dt ruggedness
• Avalanche capability
• International standard packages

Applications:

• Synchronous rectification in switching power supplies
• Motor control (48V-80V systems)
• DC-DC converters
• Uninterruptible power supplies
• Electric forklifts
• Class-D audio amplifiers
• Telecom systems

GD Rectifiers has been an official distributor for IXYS: now part of Littelfuse for over 25 years and offers customers IXYS’ broad range of diodes, IGBTs, inverter modules, MOSFETs, rectifier bridges, AC controlled thyristors, SiC power MOSFETs, Sic schottky diodes, switchable current regulators, thyristors, thyristor diode modules and thyristor module accessories.

To find out more about how we can support your requirements from initial concept through to design, development and manufacturing, please call GD Rectifiers on 01444 243 452 or email [email protected].