SiC Power MOSFETs

Our range of Silicon carbide (SiC) solutions include N channel enhancement SiC MOSFETs (normally off) with a blocking voltage of 900v, 1200V and 1700V. Silicon Carbide power MOSFETs are used in highly efficient DC-DC converters, solar inverters, inductive welding, high frequency inverters, power supplies, inductive hardening, UPS systems and supercharge solutions.

SiC Power MOSFETs by GD Rectifiers

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SiC Power MOSFETs

UL Recognised Silicon Carbide (SiC) Power MOSFETs

IXYS offers a wide range of silicon carbide solutions including N channel enhancement SiC MOSFET (normally off) with 1200V and 1700V blocking voltage and SiC schottky diodes in MiniBLOC (SOT-227) package featuring 3kV isolation to heatsink and a low impedance. IXYS’ silicon carbide packages are UL recognised, 3000V AC isolation voltage, aluminium nitride isolation for optimised thermal performance and advanced power cycling.

Silicon carbide is a popular semiconductor material offering very fast switching, very low on state and switching losses and increased power density. IXYS’ silicon carbide range can be used achieving smaller and more efficient converters following the demand for higher bus voltages.

IXYS’ silicon carbide MOSFETs are used in high efficient DC-DC converters, solar inverters, inductive welding, high frequency inverter, power supplies, inductive hardening, UPS systems and supercharge solutions.

 

Silicon Carbide Power MOSFETs

Part Type    

  

 VDSS     

V

 ID25 Tc = 25°C     

A

 ID80 Tc = 80°C  

A

 RDS (on) Tc = 25°C    

mΩ (typ)

 Ciss typ    

pF

 Qg typ   

nC

 RthJC      

K/W
IXFN 130N90SK 900 136 109 10 4500 68 0.42
IXFN 27N120SK 1200 27 21.5 80 950 62 1.10
IXFN 50N120SiC 1200 47 35 40 1900 100 0.55
IXFN 50N120SK 1200 48 38 40 1895 115 0.60
MCB 40I1200TZ 1200 60 45 40 1895 115 0.40
IXFN 70N120SK 1200 68 55 25 2790 160 0.45
MCB 60I1200TZ 1200 90 70 25 2790 160 0.27
IXFN 45N170SK 1700 47 35 45 3670 188 0.40
IXFN 90N170SK 1700 90 67 23 7340 376 0.22
                                                                                           Phase Leg
MCB 20P1200LB 1200 22 17.5 80 950 62 1.60
MCB 25P1200TLB 32 25.5 80 950 62 0.75
MCB 30P1200LB 37 29.5 40 1895 115 1.00
MCB 40P1200LB 58 43 25 2790 160 0.60
MCB 60P1200TLB 77 62 25 2790 161 0.35

 

SiC MOSFET 6-Pack

Part Type     

  

 VDSS     

V

 ID25 Tc = 25°C     

A

 ID80 Tc = 80°C  

A

 RDS (on) Tc = 25°C    

mΩ (typ)

 Ciss typ    

pF

 Qg typ   

nC

 RthJC      

K/W
MMCB 20WO1200TMI  1200 22 17.5 80 950 62 1.6

 

For further information on IXYS’ silicon carbide power MOSFETs please contact us on 01444 243 452 or email enquiries@gdrectifiers.co.uk.