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10.05.2018

May 2018 – IXYS 60V TrenchT3 HiPerFET Power MOSFETs

Published on: 10/05/2018

Learn more about the IXYS 60V TrenchT3 HiPerFET Power MOSFETs

 

IXYS 60V TrenchT3 HiPerFET Power MOSFETs by GD Rectifiers

 

IXYS 60V TrenchT3 HiPerFET Power MOSFETs

IXYS’ 60V TrenchT3 HiPerFET Power MOSFETs are ultra low on-resistance, rugged devices for industrial power conversion applications.

Features

  • Ultra low on-state resistance
  • High current handling capability
  • Avalanche rated
  • Fast body diode
  • 175°C operating temperature
  • High power density
  • Available in international standard packages: TO-220, TO-263, TO-247

 

Key Technology Advantages

TrenchT3 Technology

  • Rds(on) as low as 3.1mΩ
  • High current handling capability
  • Reduction in the number of MOSFETs needed
  • Paralleling multiple devices avoided

 

Avalanche Ruggedness & Fast Body Diode

  • Avalanche rated at high avalanche current levels
  • Junction temperature up to 175°c
  • High efficiency during high-speed switching

 

GD Rectifiers is an authorised European Distributor for IXYS components, shop our full range of IXYS products by division here.

Alternatively call us on 01444 243 452 or email enquiries@gdrectifiers.co.uk for a no obligation quote today.

 

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