August 2017 – IXYS 900V XPT IGBTs
Published on: 01/08/2017
Learn more about IXYS' 900V XPT IGBT product line
The IXYS 900V XPT IGBTs are manufactured using the proprietary thin-wafer technology called Extreme-light Punch-Through (XPT) and the state-of-the-art 3rd generation (GenX3) IGBT process. The devices exhibit such qualities as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability.
In addition to being avalanche rated, they have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 900V – a necessary ruggedness in snubberless hard-switching applications.
The optional co-packed diodes in Sonic-FRD or HiPerFRED Technology are optimised to reduce turn-off losses and suppress ringing oscillations, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the system.
Due to the soft recovery characteristics of the diodes, the IGBTs can be switched on at very high rates of change in current (di/dt), even in low current and temperature conditions. Other advantages include low gate drive requirements and multiple-device paralleling capability, respectively.
These are various high-voltage and high-speed applications that the 900V XPT IGBTs are suited for. Among these are high-frequency power inverters, uninterruptible power supplies, motor drives, switched-mode power supplies, power factor correction circuits, battery chargers, welding machines, lamp ballasts, e-bikes and hybrid electric vehicles.
The IXYS 900V XPT IGBTs are available in the following international standard packages: TO-220, TO-247, PLUS247, TO-252, TO-263, TO-264, TO-268 and SOT-227. Some example part numbers include: IXYA8N90C3D1, IXYH24N90C3, IXYN80N90C3H1 and IXYK140N90C3 with collector current ratings of 20a, 44a, 115a and 310A.
For further information on all IXYS products please visit the GD Rectifiers website here.